feb.1999 (dz) a 1 k 2 cr 1 k 1 k 1 g 1 cr 2 a 2 k 2 g 2 (cz) a 1 cr 1 k 1 k 2 k 1 g 1 cr 2 a 2 k 2 g 2 93.5 80 16.5 23 23 3?5 2 f 6.5 26 13 k1 g1 k2 g2 tab # 110, t=0.5 30 21 6.5 9 label mitsubishi thyristor modules tm55dz/cz-24,-2h high voltage high power general use insulated type outline drawing & circuit diagram dimensions in mm application dc motor control, nc equipment, ac motor control, contactless switches, electric furnace temperature control, light dimmers tm55dz/cz-24,-2h ? i t (av) average on-state current ............ 55a ? v rrm repetitive peak reverse voltage ........ 1200/1600v ? v drm repetitive peak off-state voltage ........ 1200/1600v ? double arms ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271
feb.1999 absolute maximum ratings unit v v v v v v mitsubishi thyristor modules tm55dz/cz-24,-2h high voltage high power general use insulated type 24 1200 1350 960 1200 1350 960 2h 1600 1700 1280 1600 1700 1280 symbol v rrm v rsm v r (dc) v drm v dsm v d (dc) parameter repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage repetitive peak off-state voltage non-repetitive peak off-state voltage dc off-state voltage unit a a a a 2 s a/ m s w w v v a c c v nm kgcm nm kgcm g conditions single-phase, half-wave 180 conduction, t c =81 c one half cycle at 60hz, peak value value for one cycle of surge current v d =1/2v drm , i g =1.0a, t j =125 c charged part to case main terminal screw m5 mounting screw m6 typical value ratings 86 55 1100 5.0 10 3 100 5.0 0.5 10 5.0 2.0 C40~+125 C40~+125 2500 1.47~1.96 15~20 1.96~2.94 20~30 160 symbol i t (rms) i t (av) i tsm i 2 t di/dt p gm p g (av) v fgm v rgm i fgm t j t stg v iso parameter rms on-state current average on-state current surge (non-repetitive) on-state current i 2 t for fusing critical rate of rise of on-state current peak gate power dissipation average gate power dissipation peak gate forward voltage peak gate reverse voltage peak gate forward current junction temperature storage temperature isolation voltage mounting torque weight voltage class electrical characteristics unit ma ma v v/ m s v v ma c/w c/w m w limits symbol i rrm i drm v tm dv/dt v gt v gd i gt r th (j-c) r th (c-f) parameter repetitive peak reverse current repetitive peak off-state current on-state voltage critical rate of rise of off-state voltage gate trigger voltage gate non-trigger voltage gate trigger current thermal resistance contact thermal resistance insulation resistance test conditions t j =125 c, v rrm applied t j =125 c, v drm applied t j =125 c, i tm =165a, instantaneous meas. t j =125 c, v d =2/3v drm t j =25 c, v d =6v, r l =2 w t j =125 c, v d =1/2v drm t j =25 c, v d =6v, r l =2 w junction to case (per 1/2 module) case to fin, conductive grease applied (per 1/2 module) measured with a 500v megohmmeter between main terminal and case min. 500 0.25 15 10 typ. max. 10 10 1.5 2.0 100 0.5 0.2
feb.1999 0 10 1 10 0 10 ? 10 ? 10 ? 10 ? 10 1 10 0 10 1 10 2 10 3 10 4 10 3 10 2 10 1 10 0 10 70 50 30 20 7 5 3 2 200 400 1200 600 800 1000 10 1 100 0.6 7 5 3 2 7 5 3 2 7 5 3 2 0.8 1.2 2.0 2.2 1.6 1.0 1.4 1.8 t j =125? 7 5 3 2 7 5 3 2 7 5 3 2 3 2 7 5 3 2 7 5 3 2 4 7 5 4 v gt =2.0v i gt = 100ma i fgm =2.0a p gm =5.0w v fgm =10v v gd =0.25v p g(av) = 0.50w t j =25? 7 5 3 2 7 5 3 2 7 5 3 2 0.8 0 7 5 3 2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 080 30 10 50 70 80 10 20 30 40 50 60 70 20 40 60 q =30 120 90 180 q 360 60 130 50 06080 10 20 50 60 70 80 90 100 110 120 30 40 70 q =30 60 q 360 120 180 90 resistive, inductive load per single element resistive, inductive load per single element performance curves maximum on-state characteristic gate characteristics maximum transient thermal impedance (junction to case) maximum average on-state power dissipation (single phase halfwave) limiting value of the average on-state current (single phase halfwave) rated surge (non-repetitive) on-state current on-state current (a) surge (non-repetitive) on-state current (a) on-state voltage (v) conduction time (cycles at 60hz) gate voltage (v) average on-state power dissipation (w) transient thermal impedance ( c/w) case temperature ( c) time (s) gate current (ma) average on-state current (a) average on-state current (a) mitsubishi thyristor modules tm55dz/cz-24,-2h high voltage high power general use insulated type
feb.1999 0 0 100 20 100 80 20 40 60 40 60 80 q 360 q =30 60 270 dc 180 120 90 130 50 60 70 80 90 100 110 120 0 100 20 80 40 60 q =30 60 dc 270 q 360 180 90 120 0 0 160 40 20 160 60 140 120 100 80 60 40 20 80 100 120 140 q =180 60 90 30 q 360 q 120 50 0 160 40 20 130 60 80 100 120 140 60 70 80 90 100 110 120 q 360 q q =30 60 90 120 180 0 0 160 60 20 160 100 140 120 100 80 60 40 20 120 40 80 140 q =30 60 120 90 180 q 360 q 130 50 0 160 40 20 100 120 60 60 80 140 70 80 90 100 110 120 q 360 q q =30 60 180 120 90 resistive, inductive load per single element resistive, inductive load per single element resistive, inductive load per single module resistive, inductive load per single module resistive, inductive load resistive, inductive load maximum average on-state power dissipation (rectangular wave) limiting value of the average on-state current (rectangular wave) average on-state power dissipation (w) average on-state current (a) average on-state current (a) maximum average on-state power dissipation (single phase fullwave ac) limiting value of the rms on-state current (single phase fullwave ac) rms on-state current (a) rms on-state current (a) limiting value of the dc output current (single phase fullwave rectified) maximum on-state power dissipation (single phase fullwave rectified) on-state power dissipation (w) (per single module) dc output current (a) (per two modules) dc output current (a) (per two modules) average on-state power dissipation (w) case temperature ( c) case temperature ( c) case temperature ( c) (per single module) mitsubishi thyristor modules tm55dz/cz-24,-2h high voltage high power general use insulated type
feb.1999 0 0 160 80 40 160 120 140 120 100 80 60 40 20 20 140 60 100 q =30 60 120 90 q 360 50 0 160 80 40 130 120 60 20 140 60 100 70 80 90 100 110 120 90 q =30 60 120 q 360 resistive, inductive load resistive, inductive load case temperature ( c) (per single module) on-state power dissipation (w) (per single module) maximum on-state power dissipation (three phase fullwave rectified) limiting value of the dc output current (three phase fullwave rectified) dc output current (a) (per three modules) dc output current (a) (per three modules) mitsubishi thyristor modules tm55dz/cz-24,-2h high voltage high power general use insulated type
|
